BUT211X Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT211X
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for high frequency electronic lighting ballast
applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
850
V
V_CEO Collector-Emitter Voltage
400
V
V_EBO Emitter-Base Voltage
9
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current-Continuous
2
A
I_BM
Base Current-peak
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
4
A
32
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 3.95 ℃/W
isc Website：www.iscsemi.cn