BUT18 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon diffused power transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUT18 BUT18A
DESCRIPTION
With TO-220C package
High voltage ,high speed
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
BUT18
BUT18A
Open emitter
V_CEO
Collector-emitter voltage
BUT18
BUT18A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
I_BM
Base current-peak
P_tot
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
850
1000
400
450
9
6
12
3
6
110
150
-65~150
UNIT
V
V
V
A
A
A
A
W