BUT131H Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT131H
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 450V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage V_BE= 0
850
V
V_CEO
Collector-Emitter Voltage
450
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
8
A
80
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.56 ℃/W
isc Website：www.iscsemi.cn