BUT12A Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT12A
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1000
V
V_CEO
Collector-Emitter Voltage
450
V
V_EBO
Emitter-Base Voltage
9
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
20
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
6
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case
1.0
℃/W
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