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| BUT11AI Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT11AI
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
2
A
100
W
150
â
Tstg
Storage Temperature Range
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 â/W
isc websiteï¼www.iscsemi.cn
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