BUT100 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT100
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min.)
·Hight Current Capability
·Hight Ruggedness
APPLICATIONS
·Motor Control
·Uninterruptable Power Supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
50
A
ICM
Collector Current-Peak Repetitive
150
A
PC
Collector Power Dissipation
@ TC=75℃
300
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-55~200
℃
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