BUS50 Datasheet, PDF (1/2 Pages) Motorola, Inc – 70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS (BVCEO) 350 WATTS 200 V (BVCES)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUS50
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min)
·High Current Capability
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for low voltage ,high speed,power switching in
Inductive circuits where fall time is critical.It is particularly
suited for battery switch mode application such as
switching regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO(SUS) Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
70
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
20
A
350
W
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.5
UNIT
℃/W
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