BUS23B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS23B/C
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V (Min)-BUS23B
450V (Min)-BUS23C
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CES
Collector- Emitter
Voltage(V_BE= 0)
BUS23B
750
V
BUS23C
850
V_CEO
Collector-Emitter
Voltage
BUS23B
400
V
BUS23C
450
V_EBO
I_C
I_CM
I_BB
I_BM
P_C
T_j
T_stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@T_C=25℃
Junction Temperature
Storage Temperature Range
9
V
15
A
30
A
6
A
9
A
175
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
0.7 ℃/W
isc Website：www.iscsemi.cn