BUS23A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS23/A
DESCRIPTION
·
High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V (Min)-BUS23
350V (Min)-BUS23A
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter
Voltage(VBE= 0)
BUS23
550
V
BUS23A
650
VCEO
Collector-Emitter
Voltage
BUS23
300
V
BUS23A
350
VEBO
IC
ICM
IB
IBM
PC
Tj
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@TC=25℃
Junction Temperature
Storage Temperature Range
9
V
15
A
30
A
6
A
9
A
175
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.7 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}