English
Language : 

BUS22B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS22B/C
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUS22B
450V (Min)-BUS22C
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter
Voltage(VBE= 0)
BUS22B
750
V
BUS22C
850
VCEO
Collector-Emitter
Voltage
BUS22B
400
V
BUS22C
450
VEBO
IC
ICM
IBB
IBM
PC
Tj
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@TC=25℃
Junction Temperature
Storage Temperature Range
9
V
8
A
20
A
4
A
6
A
125
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.4 ℃/W
isc Website:www.iscsemi.cn