BUS133 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS133/A
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V (Min)-BUS133
500V (Min)-BUS133A
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
BUS133
850
Collector- Emitter
VCES
Voltage(VBE= 0)
V
BUS133A 1000
BUS133
450
Collector-Emitter
VCEO
Voltage
V
BUS133A 500
VEBO
IC
ICM
IB
IBM
PC
Tj
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@TC=25℃
Junction Temperature
Storage Temperature Range
9
V
15
A
20
A
10
A
15
A
175
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 1.0 ℃/W
isc website：www.iscsemi.cn
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