BUS131 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS131/A
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V (Min)-BUS131
500V (Min)-BUS131A
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
BUS131
850
V_CES
Collector- Emitter
Voltage(V_BE= 0)
V
BUS131A 1000
BUS131
450
V_CEO
Collector-Emitter
Voltage
V
BUS131A
500
V_EBO
I_C
I_CM
I_BB
I_BM
P_C
T_j
T_stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T_C=25℃
Junction Temperature
Storage Temperature Range
9
V
5
A
10
A
4
A
8
A
125
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
1.4 ℃/W
isc Website：www.iscsemi.cn