BUS11 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS11/A
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V (Min)-BUS11
450V (Min)-BUS11A
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CES
Collector- Emitter
Voltage(V_BE= 0)
BUS11
850
V
BUS11A 1000
V_CEO
Collector-Emitter
Voltage
BUS11
400
V
BUS11A
450
V_EBO
I_C
I_CM
I_BB
I_BM
P_C
T_j
T_stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T_C=25℃
Junction Temperature
Storage Temperature Range
9
V
5
A
10
A
2
A
4
A
100
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
1.75 ℃/W
isc Website：www.iscsemi.cn