BUR52 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUR52
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 250V(Min)
·High Current Capability
·Low Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 25A
APPLICATIONS
·Designed for switching and linear applications in military
and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
350
V
VCEO(SUS) Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=100℃
TJ
Junction Temperature
Tstg
Storage Temperature
60
A
80
A
16
A
350
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.5
UNIT
℃/W
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