BUP54 Datasheet, PDF (1/2 Pages) Seme LAB – NPN MULTI-EPITAXIAL TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP54
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V (Max.) @IC= 10A
·High Switching Currents.
·High Reliability.
·Military options available.
APPLICATIONS
·Designed for switching regulators,motor drive control
high power convertors applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
500
V
275
V
10
V
50
A
70
A
300
W
200
℃
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.58 ℃/W
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