BUP23BF Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V (Min)-BUP23BF
450V (Min)-BUP23CF
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector- Emitter
Voltage(V_BE= 0)
BUP23BF
750
V
BUP23CF
850
V_CEO
Collector-Emitter
Voltage
BUP23BF
400
V
BUP23CF
450
V_EBO
Emitter-Base Voltage
9
V
I_C
Collector Current- Continuous
15
A
I_CM
Collector Current-Peak
30
A
I_BB
Base Current- Continuous
6
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
9
A
37
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
3.4 ℃/W
Thermal Resistance,Junction to Ambient 35 ℃/W
isc Product Specification
BUP23BF/CF
isc Website：www.iscsemi.cn