 English |
|
|
|
|
|
|
|
| BUP23B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUP23B
450V (Min)-BUP23C
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
BUP23B
750
VCES
Collector- Emitter
Voltage(VBE= 0)
V
BUP23C 850
BUP23B
400
VCEO
Collector-Emitter
Voltage
V
BUP23C 450
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current- Continuous
15
A
ICM
Collector Current-Peak
30
A
IBB
Base Current- Continuous
6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
9
A
125
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 0.7 â/W
isc Product Specification
BUP23B/C
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese