BUP22BF Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 400V(Min)-BUP22BF
= 450V(Min)-BUP22CF
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching-
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector- Emitter
Voltage V_BE=0
BUP22BF 750
V
BUP22CF 850
V_CEO
Collector-Emitter
Voltage
BUP22BF 400
V
BUP22CF 450
V_EBO
Emitter-Base Voltage
9
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
20
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
6
A
34
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
3.7 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W
isc Product Specification
BUP22BF/CF
isc Website：www.iscsemi.cn