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BUP22B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP22B/C
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)-BUP22B
= 450V(Min)-BUP22C
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching-
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter
Voltage VBE=0
BUP22B
750
V
BUP22C 850
BUP22B
400
VCEO
Collector-Emitter Voltage
V
BUP22C 450
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
4
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
125
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0 â/W
isc Websiteï¼www.iscsemi.cn
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