BUP22A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP22A
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 350V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching-
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
V_CEO
V_EBO
I_C
I_CM
I_BB
I_BM
P_C
T_J
T_stg
Collector- Emitter Voltage V_BE=0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ T_C=25℃
Junction Temperature
Storage Temperature Range
650
V
350
V
9
V
8
A
20
A
4
A
6
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.0 ℃/W
isc Website：www.iscsemi.cn