BUL903ED Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL903ED
DESCRIPTION
·INTEGRATED ANTISATURATION AND
PROTECTIONNETWORK
·INTEGRATED ANTIPARALLELCOLLECTOR
EMITTER DIODE
·HIGH VOLTAGECAPABILITY
·LOW SPREADOF DYNAMIC PARAMETERS
·MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
·VERYHIGH SWITCHING SPEED
·ARCING TEST SELFPROTECTED
APPLICATIONS
·LAMP ELECTRONIC BALLASTFOR
FLUORESCENT LIGHTINGUSING 277V
HALF BRIDGECURRENT-FED
CONFIGURATION
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCES
Collector-Emitter Voltage (VBE = 0)
900
VCEO
Collector-Emitter Voltage(IB = 0)
400
VEBO
Emitter-Base Voltage (IC = 0)
7
IC
Collector Current-Continuous
5
ICM
Collector Peak Current (tp <5 ms)
8
IB
Base Current
2
PC
Collector Power Dissipation
@ TC=25℃
70
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.8 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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