BUL810 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL810
DESCRIPTION
·High Voltage Capability
·High Switching Speed
APPLICATIONS
Designed for use in lighting applications and low cost
swith-mode power supplies.
·Electronic transformer for halogen lamps
·Electronic ballasts for fluorescent lighting
·Switch mode power supplies
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
1000
V
V_CEO Collector-Emitter Voltage
500
V
V_EBO Emitter-Base Voltage
9
V
I_C
Collector Current-Continuous
15
A
I_CM
Collector Current-peak ( tp <5 ms )
22
A
I_BB
Base Current-Continuous
5
A
I_BM
Base Current-peak ( tp <5 ms )
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
10
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction-Case
1.0
Thermal Resistance,Junction-Ambient 30
℃/W
℃/W
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