BUL742C Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL742C
DESCRIPTION
·Collector–Emitter Breakdown Voltage
: V_(BR)CEO = 400V(Min.)
·Collector Saturation Voltage
: V_CE(sat) = 0.2V(Max) @ I_C= 0.8A
APPLICATIONS
·Designed for electronic lamp ballast circuits switch-mode
power supplies applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES Collector-Emitter Voltage
900
V
V_CEW Collector-Emitter Voltage
500
V
V_CEO Collector-Emitter Voltage
400
V
V_EBO Emitter-Base Voltage
11
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-peak
7.5
A
I_BB
Base Current-Continuous
2.5
A
I_BM
Base Current-peak
Collector Power Dissipation
P_C
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
4
A
50
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
2.5 ℃/W
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