BUL742 Datasheet, PDF (1/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUL742
DESCRIPTION
·With TO-220C package
·High voltage capability
·Very high switching speed
APPLICATIONS
·Electronic ballast for fluorescent
lighting
·Switch mode power supplies
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak (t_p<5 ms)
I_B
Base current
I_BM
Base current-Peak (t_p<5 ms)
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
·
VALUE
900
400
12
4
8
2
4
70
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
VALUE
1.78
UNIT
℃/W