BUL741 Datasheet, PDF (1/2 Pages) STMicroelectronics – High voltage fast-switching NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL741
DESCRIPTION
·Collector–Emitter Breakdown Voltage
: V_(BR)CEO = 400V(Min.)
·Collector Saturation Voltage
: V_CE(sat) = 0.5V(Max) @ I_C= 0.7A
APPLICATIONS
·Designed for electronic lamp ballast circuits switch-mode
power supplies applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector-Emitter Voltage
1050
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
15
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-peak
5
A
IB
Base Current-Continuous
1.5
A
IBM
Base Current-peak
Collector Power Dissipation
PC
TC=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
3
A
60
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
2.08 ℃/W
isc website：www.iscsemi.cn
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