BUL59 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL59
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V_CEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: V_CE(sat) = 0.5V(Max) @ I_C= 2A
·High Speed Switching
APPLICATIONS
·Designed for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES Collector-Emitter Voltage
850
V
V_CEO Collector-Emitter Voltage
400
V
V_EBO Emitter-Base Voltage
9
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-peak
16
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
8
A
90
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-A}
Thermal Resistance,Junction to Case
1.39 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn