BUL58D Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
Silicon NPN Power Transistor
Product Specification
BUL58D
DESCRIPTION
·High Voltage Capability
·High Speed Switching
·Integrated Antiparallel Collector-Emitter Diode
APPLICATIONS
·Electronic ballasts for fluorescent lighting
·Electronic transformers for halogen lamps
·Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector- Emitter Voltage
800
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current
8
A
ICM
Collector Peak Current
16
A
IB
Base Current
4
A
IBM
Base Peak Current
Collector Power Dissipation
PC
@TC=25℃
T_j
Junction Temperature
8
A
85
W
150
℃
T_stg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.47 ℃/W
62.5 ℃/W
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