BUL58B Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL58B
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V_CEO(SUS) = 100V(Min.)
·Collector Saturation Voltage
: V_CE(sat) = 0.2V(Max) @ I_C= 1A
·High Speed Switching
APPLICATIONS
·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
17
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
TC=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
4
A
50
W
150
℃
-55~150 ℃
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