BUL57 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL57
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.65V(Max) @ IC= 2A
·High Speed Switching
APPLICATIONS
·Designed for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
16
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
7
A
85
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.5 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W
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