BUL56B Datasheet, PDF (1/3 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUL56B
DESCRIPTION
With TO-220C package
High voltage
Fast switching
High energy rating
APPLICATIONS
Designed for use in electronic
ballast applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_tot
Total power dissipation
T_C=25
T_stg
Operating and storage temperature
VALUE
250
100
10
18
25
5
85
-55~150
UNIT
V
V
V
A
A
A
W