BUL52B Datasheet, PDF (1/3 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BUL52B
DESCRIPTION
With TO-220C package
High voltage
Fast switching
High energy rating
APPLICATIONS
Designed for use in electronic
ballast applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_tot
Total power dissipation
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
800
400
10
8
12
4
100
-55~150
UNIT
V
V
V
A
A
A
W