BUL49D Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL49D
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V_CEO(SUS) = 450V(Min.)
·Collector Saturation Voltage
: V_CE(sat) = 0.3V(Max) @ I_C= 1.0A
·Very High Switching Speed
APPLICATIONS
·Electronic transformers for halogen lamps
·Flyback and forward single transistor low power converters
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector-Emitter Voltage
850
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak t_p<5ms
10
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak t_p<5ms
Collector Power Dissipation
PC
TC=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
4
A
80
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-A}
Thermal Resistance,Junction to Case
1.56 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.cn
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