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BUL39D Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL39D
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 450V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1.0A
·Very High Switching Speed
APPLICATIONS
·Designed for use in lighting applications and low cost switch-
mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector-Emitter Voltage
850
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-peak tp<5ms
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak tp<5ms
Collector Power Dissipation
PC
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
4
A
70
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-A
Thermal Resistance,Junction to Case
1.78 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W
isc website:www.iscsemi.cn
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