BUL381D Datasheet, PDF (1/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
High voltage ,high speed
Integrated antiparallel
collector-emitter diode
APPLICATIONS
Designed for use in lighting
applications and low cost
switch-mode power supplies.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak (t_p<5 ms)
I_B
Base current
I_BM
Base current-Peak (t_p<5 ms)
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
Product Specification
BUL381D
VALUE
800
400
9
5
8
2
4
70
150
-65~150
UNIT
V
V
V
A
A
A
A
W
VALUE
1.78
UNIT
/W