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| BUL312FP Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL312FP
DESCRIPTION
·CollectorâEmitter Sustaining Voltage
: VCEO(SUS) = 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1A
·Very High Switching Speed
APPLICATIONS
·Designed for use in lighting applications and low cost
switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
1150
V
VCEO Collector-Emitter Voltage
500
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak tp<5ms
IBB
Base Current-Continuous
10
A
3
A
IBM
Base Current-peak tp<5ms
Collector Power Dissipation
PC
TC=25â
Ti
Junction Temperature
Tstg
Storage Temperature Range
4
A
36
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-A
Thermal Resistance,Junction to Case
3.5 â/W
Thermal Resistance,Junction to Ambient 62.5 â/W
isc Websiteï¼www.iscsemi.cn
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