BUL128DB Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL128DB
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 0.7V(Max) @ IC= 0.5A
·Very High Switching Speed
APPLICATIONS
·Designed for electronic ballasts for fluorescent lighting.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-peak tp<5ms
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak tp<5ms
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
4
A
70
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.78 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
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