BUL1203E Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL1203E
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Electronic ballasts for fluorescent lighting
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1200
V
V_CES
Collector-Emitter Voltage V_BE= 0
1200
V
V_CEO
Collector-Emitter Voltage
550
V
V_EBO
Emitter-Base Voltage
9
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
8
A
I_BB
Base Current
2
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
4
A
100
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case 1.25 ℃/W
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