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BUK453-60A Datasheet, PDF (1/2 Pages) NXP Semiconductors – PowerMOS transistor | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK453-60A/B
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
Drain
BUK453-60A
ID
Current-continuou
s@ TC=37â
BUK453-60B
Ptot
Total Dissipation@TC=25â
±30
V
22
A
20
75
W
Tj
Max. Operating Junction Temperature
175
â
Tstg
Storage Temperature Range
175
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
2.0 â/W
60 â/W
isc websiteï¼www.iscsemi.cn
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