BUK453-100A Datasheet, PDF (1/2 Pages) NXP Semiconductors – PowerMOS transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK453-100A/B
DESCRIPTION
·High speed switching
·Low R_DS(ON)
·Easy driver for cost effective application
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
Drain
BUK453-100A
ID
Current-continuou
s@ TC=37℃
BUK453-100B
Ptot
Total Dissipation@TC=25℃
±30
V
14
A
13
75
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
R_{th j-a} Thermal Resistance,Junction to Ambient
2.0 ℃/W
60 ℃/W
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