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| BUK446-800A Datasheet, PDF (1/2 Pages) NXP Semiconductors – PowerMOS transistor | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK445-800A/B
DESCRIPTION
·2A, 800V
⢠SOA is Power Dissipation Limited
⢠Nanosecond Switching Speeds
⢠Linear Transfer Characteristics
⢠Majority Carrier Device
⢠Related Literature
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
Drain
BUK446-800A
ID
Current-continuous
@ TC=37â
BUK446-800B
Ptot
Total Dissipation@TC=25â
±30
V
2.0
A
1.7
30
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
4.16 â/W
55 â/W
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