BUK444-220A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – SOA is Power Dissipation Limited

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK444-200A
DESCRIPTION
·5.3A, 200V
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• Majority Carrier Device
• Related Literature
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=37℃
5.3
A
Ptot
Total Dissipation@TC=25℃
25
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
R_{th j-a} Thermal Resistance,Junction to Ambient
5
℃/W
55 ℃/W
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