BUJ302A Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUJ302A
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Desined for use in high frequency electronic lighting ballast
applications, converters, inverters, switching regulators,
motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
500
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
IB
Base Current
0.75
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
1
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.cn
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