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BUF410A Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUF410A
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Designed for use in high-frequency power supplies and
motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV Collector-Emitter Voltage VBE= -1.5V 1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IBB
Base Current-Continuous
3
A
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
4.5
A
125
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.0 â/W
isc Websiteï¼www.iscsemi.cn
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