BUF410 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUF410
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Designed for use in high-frequency power supplies and
motor control applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEV
Collector-Emitter Voltage V_BE= -1.5V
850
V
V_CEO Collector-Emitter Voltage
450
V
V_EBO Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
15
A
I_CM
Collector Current-Peak
30
A
I_BB
Base Current-Continuous
3
A
I_BM
Base Current-peak
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
4.5
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.0 ℃/W
isc Website：www.iscsemi.cn