BUF405AFI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUF405AFI
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Designed for high reliability industrial and professional
power driving applications such as motor drivers and
off-line switching power supplies.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CEV Collector-Emitter Voltage V_BE= -1.5V 1000
V
V_CEO Collector-Emitter Voltage
450
V
V_EBO Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
7.5
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
3
A
I_BM
Base Current-peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
4.5
A
40
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
3.2 ℃/W
isc Website：www.iscsemi.cn