BU941ZP Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU941ZP
DESCRIPTION
·Built In Clamping Zener
·High Operating Junction Temperature
APPLICATIONS
·Designed for use in automotive environment as
electronic ignition power actuators.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEO
Collector-Emitter Voltage
350
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
15
A
I_CM
Collector Current-Peak
30
A
I_BB
Base Current
1
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
A
155
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 0.97 ℃/W
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