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| BU922PFI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU922PFI
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·Designed for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
500
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
10
A
ICM
Collector Current-peak
15
A
IBB
Base Current
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
55
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.27 â/W
isc Websiteï¼www.iscsemi.cn
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