BU911 Datasheet, PDF (1/2 Pages) STMicroelectronics – MEDIUM VOLTAGE NPN IGNITION DARLINGTON

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU911
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 400V(Min)
APPLICATIONS
·Solenoid/ relay drivers
·Motor control
·Electronic automotive ignition
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage V_BE= 0
450
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current
6
A
I_CM
Collector Current-peak
10
A
I_BB
Base Current
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
1
A
60
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
2.08 ℃/W
isc Website：www.iscsemi.cn