BU826 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,375V,125W)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU826
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 375V(Min)
·High Switching Speed
APPLICATIONS
Designed for line operated switchmode applications such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage(V_BE= 0)
800
V
V_CEO
Collector-Emitter Voltage
375
V
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
6
A
I_CM
Collector Current-Peak
8
A
I_BB
Base Current
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.5
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
1.0 ℃/W
isc Website：www.iscsemi.cn