BU626A Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN SILICON POWER TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU626A
DESCRIPTION
With TO-3 package
Short switching times.
High dielectric strength.
APPLICATIONS
For use in power supply units of TV receives.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
1000
400
7
10
15
100
175
-65~175
UNIT
V
V
V
A
A
W
MAX
1.5
UNIT
K/W